The 77th JSAP Autumn Meeting, 2016

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Oral presentation

CS Code-sharing session » CS.3 3.14&3.15 Code-sharing session

[15p-B8-1~14] CS.3 3.14&3.15 Code-sharing session

Thu. Sep 15, 2016 1:30 PM - 5:30 PM B8 (Exhibition Hall)

Mitsuru Takenaka(Univ. of Tokyo), Toshio Watanabe(Kagoshima Univ.), Tomohiro Amemiya(Titech)

2:30 PM - 2:45 PM

[15p-B8-5] Study on Si Optical Modulator, Using Strained SiGe Layer with in-situ B doping (Ⅱ)

〇Junichi Fujikata1, Masataka Noguchi1, Jaehoon Han2, Shigeki Takahashi1, Mitsuru Takenaka2, Takahiro Nakamura1 (1.PETRA, 2.Univ of Tokyo)

Keywords:silicon optical modulator, strained silicon germanium

We have successfully demonstrated design and fabricate the optimum Si-MOD structure by applying in-situ p-type-doped strained SiGe during deposition on the lateral pn junction structure of a Si rib waveguide and demonstrate a very a high modulation efficiency of 0.60-0.67 Vcm at a 1.3 um wavelength. We have also demonstrated a high speed operation of 28 Gbps.