[Young Scientist Presentation Award Speech] Effects of nitrogen bonding on para-/ferroelectric transition of HfO<sub>2</sub>

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

Thu. Sep 15, 2016 1:15 PM - 5:45 PM B9 (Exhibition Hall)

1:15 PM - 1:30 PM

〇Lun Xu¹, Tomonori Nishimura¹, Shigehisa Shibayama¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.The Univ. of Tokyo, 2.AIST)

Keywords:HfO2, ferroelectric, nitrogen doping