[15p-B9-1~17] 13.3 絶縁膜技術

▲ [15p-B9-8] Carrier Trapping Properties in La₂O₃/InGaAs MOSFETs

〇(D)ChihYu Chang^1,2、Mitsuru Takenaka^1,2、Shinichi Takagi^1,2 (1.The Univ. of Tokyo、2.JST-CREST)

キーワード：InGaAs MOSFET, La2O3, Carrier trapping effect

In this research, it is found that the InGaAs MOSFET with La₂O₃/InGaAs as MOS interfaces has smaller carrier trapping effect in the channel by the results of I_D-V_G hysteresis, inversion carrier trapping and drift characteristic of I_s.