Time-resolved measurements for photoluminescence from SSF in n-type 4H-SiC

Masashi Kato; Shinnya Katahira; Yoshihito Ichikawa; Masaya Ichimura; Shunta Harada

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 15, 2016 1:45 PM - 7:00 PM C302 (Nikko Houou)

Hidekazu Tsuchida(CRIEPI), Satoshi Tanimoto(Nissan ARC)

4:45 PM - 5:00 PM

[15p-C302-11] Time-resolved measurements for photoluminescence from SSF in n-type 4H-SiC

〇Masashi Kato¹, Shinnya Katahira¹, Yoshihito Ichikawa¹, Masaya Ichimura¹, Shunta Harada² (1.Nagoya Inst. Tech., 2.Nagoya Univ.)

Keywords:photoluminescence, stacking fault, time-resolved

Single Schockley stacking faults (SSF) in 4H-SiC usually expand by a recombination enhanced dislocation glide (REDG) mechanism. However, factors induce REDG are not fully understood. Therefore, in this work, we performed time-resolved measurements for photoluminescence from SSF in n-type 4H-SiC.