[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-C302-17] Analysis on Reverse Recovery Characteristics of SiC-pin Diode for High-speed and High-voltage Pulse Generator

〇Takuma Shirai¹, Noriyuki Iwamuro¹, Kenji Fukuda² (1.Univ. Tsukuba, 2.AIST)

Keywords:SiC, Diode, Reverse Recovery Charcteristics

Authors have studied on a high-voltage/high-speed SiC-pin diode for power supplies of accelerator. The aim of this study is to clarify guideline of designing structure of the diode to generate an extremely high speed and high voltage pulse. The authors have numerically and experimentally investigated the mechanism of the high speed and high voltage pulse generation by reverse recovery of a SiC-pin diode and verified how the characteristics of pulse generation changed by designing the drift layer.