[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-C302-18] Investigation of SiC Superjunction MOSFETs RonA-Vbr characteristics taking the charge imbalance of p and n layers into account

〇Mikiko Tanabe¹, Noriyuki Iwamuro¹ (1.Univ. of Tsukuba)

Keywords:SiC, SJ-MOSFET

The Superjunction (SJ) MOSFET structure can obtain lower specific on-resistance compared with conventional MOSFET structure. However, the breakdown voltage is lowered by charge imbalance (CIB) between n- and p-layer due to the electric field modulation. This issue has been investigated in Si devices. In this study, we proposed an angled n-layer structure in terms of 7.2 kV-class 4H-SiC SJ-MOSFET. This proposed structure reduces the breakdown voltage degradation and specific on-resistance, simultaneously.