[15p-P11-1~12] 15.5 IV族結晶，IV-IV族混晶

▲ [15p-P11-9] AuSb Induced Crystallization of Germanium Thin Films

〇(M1)Benedict Mutunga JOSEPH¹、Takumi KONDO¹、Tastuya SUZUKI¹、Masao KAMIKO³、Kentaro KYUNO^1,2 (1.SIT、2.RCGI,SIT、3.IIS, Tokyo Univ)

キーワード：Germanium

Low temperature growth of polycrystalline germanium thin film is realized by layer exchange mechanism using AuSb alloy. Sb is added to the Au layer in the expectation that it might lower the crystallization temperature, since Sb is known to lower the eutectic temperature of AuGe alloy. Moreover, if Sb is incorporated in the resulting crystalline Ge layer, it might be possible to realize an n-type crystalline Ge thin film at low temperature.