[15p-P12-1~4] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[15p-P12-2] Low-temperature fabrication of silicon dioxide by mist-CVD

〇Shigetaka Katori¹, Kouki Hiramatsu¹, Shinji Doi¹ (1.National Institute of Technology, Tsuyama College)

Keywords:silicon dioxide, mist-CVD, low temperature fabrication

Silicon oxide thin films were grown from the liquid source, polysilazane, by using mist chemical vapor deposition (CVD) at temperatures of 50–250 C. The films were grown with a reasonable growth rate at the temperature of 100 C. The refractive index and the thickness of the resulting thin film was 1.45 and 64nm.