[15p-P3-1~32] 6.3 Oxide electronics

[15p-P3-10] Electronic Structure and Electrical Resistivity of V₆O₁₃ Thin Film Prepared by RF Magnetron Sputtering

Atsushi Takahashi¹, Tomohiro Tanno¹, Masaki Kobayashi², Makoto Minohara², Koji Horiba², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.KEK, PF)

Keywords:Vanadium Oxide (V6O13), Mteal-Insulator Transition

We have prepared the V₆O₁₃ thin film on Al₂O₃ substrate by RF magnetron sputtering. The prepared thin film exhibits c-axis orientation and sign of metal-insulator transition. The Vanadium has the V⁴⁺/V⁵⁺ mixed valence state. The lower- and upper Hubbard bands, which are often reported in VO₂, are observed at near the Fermi level.