2016年 第77回応用物理学会秋季学術講演会

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6 薄膜・表面 » 6.3 酸化物エレクトロニクス

[15p-P3-1~32] 6.3 酸化物エレクトロニクス

2016年9月15日(木) 13:30 〜 15:30 P3 (展示ホール)

13:30 〜 15:30

[15p-P3-3] Hidden Electronic Phase Boundary in the SrTiO3−SrNbO3 Solid-solution System

〇(B)Yuqiao Zhang1、Takayoshi Katase1、Takaki Onozato1、Bin Feng2、Hiroyuki Hayashi3、Tetsuya Tohei2、Isao Tanaka3、Yuichi Ikuhara2、Hiromichi Ohta1 (1.Hokkaido Univ.、2.Univ. Tokyo、3.Kyoto Univ.)

キーワード:SrTiO3-SrNbO3 solid solution, electronic phase boundary, thermopower

Various physical properties of transition metal oxides (TMOs) are strongly correlated to their electronic phase, which can be controlled by changing the valence state of TM ions. Among many TMOs, strontium titanate−strontium niobate solid-solution (SrTi1–xNbxO3 ss.) system, so-called Nb-doped SrTiO3, is one of the most classic TMOs. There should be an electronic phase boundary (EPB) in the system; valence state of Ti ion is basically 4+ in SrTiO3 crystal, but it changes into 3+ when Nb5+ ion is substituted to the neighboring Ti ion. On the other hand, that of Nb ions is basically 4+ in SrNbO3 crystal and is unchanged when Ti ion is substituted to the neighboring Nb ion. Here we report on detection method of the hidden EPB. We measured thermopower of the SrTi1–xNbxO3 ss. epitaxial films together with the Hall mobility because thermopower is insensitive to the crystal quality though Hall mobility is very sensitive. We observed clear discontinuity in the x-dependence of thermopower together with Hall mobility in between x=0.5 and 0.6 (Figure).