[15p-P3-1~32] 6.3 Oxide electronics

[15p-P3-9] Metal-insulator Transition and Electronic Structure of Valence-Controlled VO2 Thin Film

〇Tomohiro Tanno¹, Takashi Tsuchiya², Masaki Kobayashi³, Makoto Minohara³, Koji Horiba³, Hiroshi Kumigashira³, Toru Higuchi¹ (1.Tokyo Univ. Sci, 2.NIMS, 3.PF. KEK)

Keywords:Oxside Electronics

VO₂ thin films were deposited on Al₂O₃(0001) substrates by RF magnetron sputtering using oxygen gas and V-metal target. The substrate temperature was set at 700℃ during the deposition. The thin films deposited with various by changing the amount of oxygen gas were characterized by X-ray diffraction and electrical resistance. The change of electronic structure was characterized by X-ray Photoemission Spectroscopy and X-ray Absorption Spectroscopy for metal-insulator transition of the VO2 thin films.