9:00 AM - 9:15 AM
[16a-A22-1] Fabrication and Characterization of 2-inch (001) β-Ga2O3 Wafers for Power devices
Keywords:gallium oxide, power device
Ga2O3 is expected as a new material for next-generation power devices. We will report on the successful fabrication of 2-inch (001) β-Ga2O3 wafers for power devices. The bulk single crystals were grown by EFG method. The wafers were then fabricated through the steps of slicing, lapping and CMP. There were few twin crystal defects in the wafers. The FWHM of XRD rocking curve was 34 arcsec.