11:45 〜 12:00
▲ [16a-A24-11] How Do We Apply Cat-doping to Improve Passivation Quality of SiNx Single Layer Prepared by Cat-CVD on Crystalline Silicon?
キーワード：Cat-doping, silicon nitride, passivation
We study on properties of silicon-nitride SiNx prepared by catalytic chemical vapor deposition (Cat-CVD) for surface passivation of crystalline-silicon (c-Si). It has been reported that an extremely low surface recombination velocity (SRV) < 0.2 cm/s for amorphous-silicon (a-Si)/SiNx stacked layers on n-type c-Si is obtained. However, it is not easy to achieve low SRVs in the case of SiNx single layer which has a good optical transparency compared with a-Si/SiNx stacked layers. Cham et al. have reported that by introducing a phosphorous (P) Cat-doping before depositing SiNx the SRVs can be easily decreased. This is due to the effect of Cat-doping in controlling surface potential of c-Si. However, the study is limited to investigate the application of Cat-doping for SiNx prepared at particular conditions. And so that, such SiNx films do not have chemical resistance, which is required to make fabrication process of back contact solar cells easier. Thus, in the present study, we will fabricate the SiNx films with different conditions and study how does Cat-doping affect on passivation quality of the SiNx.