[16a-A32-1~9] 17.3 Layered materials

[16a-A32-2] [Young Scientist Presentation Award Speech] Why is the dielectric breakdown strength of h-BN higher than that for diamond?

〇Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio^1,3 (1.Tokyo Univ., 2.NIMS, 3.PRESTO-JST)

Keywords:dielectric breakdown, h-BN

Hexagonal boron nitride (h-BN) is considered as ideal layered insulator for graphene and other 2D material devises. Because h-BN has a highly anisotropic crystal structure, h-BN can be regarded as the ideal model material to investigate an anisotropy. We have found that anisotropic dielectric breakdown strength (E_BD). The in-plane and out-of-plane E_BD were measured to be 3 and 12 MV/cm, respectively; the latter is higher than the ideal value of 10 MV/cm for diamond. The origin of the anisotropy is discussed.