[16a-A32-1~9] 17.3 Layered materials

[16a-A32-3] Performance Improvement of HfS₂ FET by HfO₂ passivation

〇Toru Kanazawa¹, Vikrant Upadhyaya¹, Tomohiro Amemiya^1,2, Atsushi Ishikawa^3,2, Kenji Tsuruta³, Takuo Tanaka^2,1, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.RIKEN, 3.Okayama Univ.)

Keywords:FET, transition metal dichalcogenide, atomic layer deposition

Hafnium Disulfide (HfS₂) is one of the transition metal dichalcogenides which is expected to have high electron mobility and finite bandgap. However, the fabrication process for HfS₂ based electron devices has not been established, and it is required to bring out the superior transport properties of HfS₂. In this report, we have investigated the effects of ALD HfO₂ passivation on the current properties of HfS₂ transistors. HfO₂ passivation of HfS₂ surface achieved the improvement in drain current and significant reduction of hysteresis.