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17 Nanocarbon Technology » 17.3 Layered materials

[16a-A32-1~9] 17.3 Layered materials

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A32 (302B)

Ryo Nouchi(Osaka Pref. Univ.)

10:30 AM - 10:45 AM

[16a-A32-5] Didecyl-phosphonic-acid based gate dielectrics for MoS₂ FET

〇Ryo Ikoma¹, Takamasa Kawanago¹, Shunri Oda¹ (1.Tokyo Tech)

Keywords:semiconductor, layered material, MoS2

　