The 77th JSAP Autumn Meeting, 2016

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17 Nanocarbon Technology » 17.3 Layered materials

[16a-A32-1~9] 17.3 Layered materials

Fri. Sep 16, 2016 9:00 AM - 11:45 AM A32 (302B)

Ryo Nouchi(Osaka Pref. Univ.)

10:45 AM - 11:00 AM

[16a-A32-6] Fabrication of MoS2-FET with top gate structure using ferroelectric VDF/TrFE

〇Sadamune Watanabe1, Syoki Shimizu1, Takashi Nakajima2, Takeshi Kawae1 (1.Kanazawa Univ., 2.Tokyo Univ. of Sci.)

Keywords:MoS2, FET, ferroelectric