[16a-A33-1~9] 17.2 Graphene

[16a-A33-7] Growth of Graphene/3C-SiC(111)/4H-SiC(0001) by a Sublimation Technique

〇Yoshiaki Sekine¹, Kazuhide Kumakura¹, Hibino Hiroki^1,2 (1.NTT Basic Research Labs., 2.Kwansei Gakuin Univ.)

Keywords:graphene, 3C-SiC, sublimation growth

We report sublimation growth of 3C-SiC(111) on a 4H-SiC(0001) substrate with a infrared annealer. Furthermore, graphene was grown on 3C-SiC/4H-SiC by Si-sublimation. High quality samples were confirmed by transmission electron microscopy and Raman spectroscopy. This simple method paves the way to study properties of graphene/3C-SiC, such as electrical doping, which depend on polytype of SiC.