[16a-A35-1~10] 3.13 Semiconductor optical devices

[16a-A35-1] Investigation of thermal electron-escape process in InAs/GaAs quantum dot solar cells

〇Kazuki Hirao¹, Sho Watanabe¹, Shigeo Asahi¹, Toshiyuki Kaizu¹, Yukihiro Harada¹, Takashi Kita¹ (1.Kobe univ.)

Keywords:solar cell, quantum dot

We investigated thermal electron-escape process which is issue in intermediate solar cells.We performed temperature dependence of two-step photoexcitation and analyzed thermal activation energy of electron and frequency factor from the Arrhenius-type fitting.Based on above results,we proposed the thermal electron-escape model.