[16a-B1-1~13] 13.8 Compound and power electron devices and process technology

[16a-B1-5] Characterization of trap in AlGaN/GaN HEMT on Si by drain current DLTS and MCTS

〇Kouta Takabayashi¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tech.)

Keywords:AlGaN/GaN HEMT, DLTS, MCTS

We characterize traps in AlGaN/GaN HEMT on Si by drain current DLTS and MCTS. We also characterize traps in n-GaN on Si schottky diode by capacitance DLTS and MCTS. Three electron traps E1’(0.24 eV),E6’(0.44 eV),E7’(0.82 eV) and two hole traps H1’(0.86 eV),H3’(0.25 eV) were observed in AlGaN/GaN HEMT on Si. It is confirmed from the comparison of Arrehenius plots of emission time constants that traps E1’,E6’, H1’ and H3’ correspond to E1 (0.24 eV), E6 (0.44 eV), H1 (0.86 eV) and H3 (0.25 eV) observed in n-GaN Schottky diodes on Si. Trap E7’ shows the broad spectra suggesting the presence of several traps including E7 (0.81 eV) in n-GaN Schottky diode on Si.