[16a-B5-1~13] 12.1 Fabrications and Structure Controls

△ [16a-B5-13] A Study on the Thickness Dependence of Nitrogen-Doped LaB₆ Interfacial Layer on Device Characteristics of Pentacene-Based OFET

〇(D)Yasutaka Maeda¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:pentacene, LaB6

The p-type pentacene-based OFET with N-doped LaB₆ interfacial layer had been investigated and it was found that N-doped LaB₆ interfacial layer contributed to the improvement of threshold voltage and subthreshold swing. In this paper, the thickness dependence of N-doped LaB₆ interfacial layer on p-type pentacene-based OFET was investigated and its effect on the device characteristics will be reported.