Effect of annealing on surface roughness of MOVPE-grown Ge layer on vicinal Si

Ryo Nakao; Tsuyoshi Yamamoto; Shinji Matsuo

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Fri. Sep 16, 2016 9:00 AM - 1:00 PM B9 (Exhibition Hall)

Tomoya Konishi(Natl. Inst. of Tech.,Anan Col.), Kohei Miura(Sumitomo Electric)

9:00 AM - 9:15 AM

△ [16a-B9-1] Effect of annealing on surface roughness of MOVPE-grown Ge layer on vicinal Si

〇Ryo Nakao^1,2, Tsuyoshi Yamamoto¹, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.NTT Nanophotonic Center)

Keywords:heteroepitaxial, germanium

When we growth Ge layer on vicinal Si substrate, the surface roughness of epitaxial layer is very high due to step bunching. Post-growth annealing enables us to reduce the surface roughness.