[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-4] Characterization of GaSb layers grown by MBE on InP substrates

〇Yuichi Kawamura¹, fengquan Shi¹, Kohei Miura², Yasuhiro Iguchi² (1.Osaka Pref. Univ., 2.Sumitomo elec. Ltd.)

Keywords:compound semiconductor

Type-II InAs/GaSb superlattices (SLs) are attractive material systems for mid-infrared photodiodes (PDs) with higher detectivities. GaSb substrates are generally used for the epitaxial growth of these type-II SLs. However, in the case of back-illuminated PDs, the GaSb substrate should be nearly removed because of its strong absorption of mid-infrared light. Recenty, InAs/GaSb SLs PDs grown on an InP substrate were fabricated by our group. In this study,
characterization of GaSb layers grown on InP substrate with various growth condition were carried out.