[16a-B9-1~15] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-B9-6] Electrical conductivity of biaxially-strained GaSb

〇Hideki Kishimoto¹, Takuya Hatayama¹, Akira Akaishi¹, Jun Nakamura¹ (1.UEC-Tokyo)

Keywords:semiconductor, electrical conductivity, biaxial strain

In this study, we evaluate the electrical conductivity of the biaxially-strained GaSb bulk and thin films using first-principles calculations within the density functional theory and the semi-classical Boltzmann transport theory. We assume the biaxial strain parallel to the (111) or (001) plane. For GaSb(111), the in-plane electrical conductivity, σ_in-plane, increases under the compressive strain for a high hole concentration, while σ_in-plane for a low hole concentration has a singular point at ε=0. For GaSb(001), σ_in-plane for a low hole concentration has the maximum value at ε=0 as well as that for GaSb(111). On the other hand, σ_in-plane increases not only under the compressive strain but also under the tensile strain unlike in the case of GaSb(111). We shall show the mechanism of the enhancement of σ_in-plane under the strain as well as the results for the GaSb thin films.