[16a-C301-1~9] 4.4 Opto-electronics

▲ [16a-C301-6] [JSAP-OSA Joint Symposia 2016 Invited Talk] Heterogeneous integration of SiGe/Ge and III-Vs on Si for electronic-photonic integrated circuits

〇Mitsuru Takenaka^1,2、Shinichi Takagi^1,2 (1.Univ. of Tokyo、2.JST-CREST)

キーワード：Si photonics, heterogeneous integration, electronic-photonic integrated circuit

Heterogeneous integration of SiGe, Ge and III-V semiconductors on Si enables us to integrate photodetectors (PDs), modulators, and laser didoes (LDs) on Si photonics platform. Since SiGe/Ge and III-Vs have high hole and electron mobility, we are also able to integrate monolithically high-performance metal-oxide-semiconductor (MOS) transistors based on those semiconductors. Thus, the heterogeneous integration is a key enabler to realize high-performance and low-power electronic-photonic integrated circuits (EPICs). We present our recent developments of EPICs based on SiGe/Ge and III-V integration on Si platform for near and mid-infrared photonics.