[16a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[16a-C302-12] Formation of inversion layer on p-type SiC MOS capacitors with NO-POA

〇(M1)Yuki Karamoto¹, Dai Okamoto¹, Shinsuke Harada², Mitsuru Sometani², Tetsuo Hatakeyama², Ryoji Kosugi², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Tsukuba Univ., 2.AIST)

Keywords:Silicon Carbide

We have studied electrical characteristics of p-type 4H-SiC MOS capacitors nitrided by NO-POA. Capacitance-voltage characteristics showed inversion properties regardless of the NO-POA time. On the other hand, p-type MOS capacitors with a p⁺ guard ring indicated deep depletion characteristics. Therefore, we concluded that several amount of nitrogen atoms were doped at the surface of SiC by NO-POA, and electrons generated from the nitrogen donors were gathered beneath the gate electrode resulting in forming the inversion layer.