[16a-C32-1~12] 3.8 Optical measurement, instrumentation, and sensor

[16a-C32-12] Ellipsometric evaluation of particles attached to Si wafer surface

〇(M1C)Katsuya Suzuki¹, Eiichi kondoh¹, Mitsuhiro Watanabe¹, Lianhua Jin¹, Satomi Hamada², Shouhei Shima², Hirokuni Hiyama² (1.Yamanashi Univ., 2.Ebara Corp.)

Keywords:Ellipsometry

In the chemical mechanical polishing step in the semiconductor manufacturing process is a challenge the detection of residual contaminant particles on the wafer surface. The detection of contaminating residual particles are light scattering method is used by the laser. However, in the light scattering method for the separation of micro-roughness and residual contaminant particles it is difficult, we have a focus on the structure measurable spectroscopic ellipsometer of ultrathin surface layer of sub nm. This study measures the wafer with controlled particle density, aimed to verify the usefulness of ellipsometry in the particle quantitative evaluation.