9:00 AM - 9:15 AM
▲ [16a-D61-1] Realization of UTB-SGOI with tensile strain through hetero-layer transfer technique
Keywords:SiGe, strain, SiGe on Insulator
The ultra thin body (UTB) SiGe on insulator (SGOI) substrate with body thickness of only 5 nm has been fabricated by hetero-layer transfer technique with highly selective wet etching. According to Raman spectroscopy, UTB-SiGe layer with Ge fraction of 67% and +1 % partially tensile strain was transferred onto the SiO2/Si host substrate without the strain degradation, which is very encouraging for further device fabrication using strain engineering.