[16a-D61-1~11] 15.5 IV族結晶，IV-IV族混晶

▲ [16a-D61-1] Realization of UTB-SGOI with tensile strain through hetero-layer transfer technique

〇(PC)WENHSIN CHANG¹、Hiroyuki Ishii¹、Hiroyuki Hattori¹、Toshifumi Irisawa¹、Noriyuki Uchida¹、Tatsuro Maeda¹ (1.AIST)

キーワード：SiGe, strain, SiGe on Insulator

The ultra thin body (UTB) SiGe on insulator (SGOI) substrate with body thickness of only 5 nm has been fabricated by hetero-layer transfer technique with highly selective wet etching. According to Raman spectroscopy, UTB-SiGe layer with Ge fraction of 67% and +1 % partially tensile strain was transferred onto the SiO₂/Si host substrate without the strain degradation, which is very encouraging for further device fabrication using strain engineering.