[16a-P5-1~32] 15.4 III-V族窒化物結晶

▼ [16a-P5-13] Direct Growth of GaN on a 3C–SiC/Si Template

〇(M2C)Peifeng Song¹、Zheng Sun^1,2、Shugo Nitta⁴、Yoshio Honda⁴、Hiroshi Amano^2,3,4、Mitsuhisa Narukawa⁵、Keisuke Kawanura⁵、Ichiro Hide⁵ (1.Department of Electrical Engineering and Computer Science, Nagoya Univ.、2.Venture Business Lab, Nagoya Univ.、3.Akasaki Research Center, Nagoya Univ.、4.Institute of Materials and Systems for Sustainability (IMaSS), Nagoya Univ.、5.AIR WATER INC.)

キーワード：GaN, SiC, direct growth

GaN and SiC are candidates for the next generation power devices. 3C–SiC epitaxial growth technique on Si substrate is attracting widespread interest due to its low cost and large size. GaN/3C–SiC/Si, resulting from GaN directly grown on a 3C–SiC/Si template, offers new possibilities for GaN and 3C–SiC based vertical structure hybrid power devices. Here we report a method for the direct growth of GaN on 3C–SiC/Si template.