[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-21] Impact of low temperature GaN buffer layer in growth of GaN on Al templates by RF-MBE

〇Kazuki Uehara¹, Yuya Hoshikawa¹, Takeyoshi Onuma¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ.)

Keywords:RF-MBE, GaN