[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-24] Application of Carbon Nanotube/GaN Interface for Electrode of p-GaN

〇Toshiya Yokogawa¹, Shota Miyake¹, Yuji Mouri¹, Masaharu Nakayama¹ (1.Yamaguchi Univ.)

Keywords:Nitride semiconductor, Carbon Nanotube, Contact resistivity

Recently optoelectronic devices and electronic power devices using GaN-based materials have attracted much attention because they exhibit high optical and electrical power with high efficiency due to the wide band-gap. These power devices are generally used in high temperature operation by the heat dissipation of devices. Therefore, for high device reliability, it is important to design the mounting structure for heat sink to obtain efficient heat spreading. Carbon nanotube is expected to be excellent heat conductor for heat spreading of the power device because of extremely high thermal conductivity. Therefore, it is thought that carbon nanotube is very useful for electrode material with high thermal conductivity in the GaN power device.There is possibility to exhibit ohmic property to p-GaN if the MWCNTs workfunction is relatively large. In this paper, we present results of electrical characterization. We demonstrate relatively low contact resistance of the MWCNTs ohmic contact to p-GaN film.