The 77th JSAP Autumn Meeting, 2016

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Poster presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-P5-1~32] 15.4 III-V-group nitride crystals

Fri. Sep 16, 2016 9:30 AM - 11:30 AM P5 (Exhibition Hall)

9:30 AM - 11:30 AM

[16a-P5-32] Numerical simulation study on the effect of strain compensate for InGaN/GaN MQW

〇Yuji Mukaiyama1, M.E. Rudinsky2, K. A. Bulashevich2, E.V. Yakovlev2 (1.STR K.K., 2.STR Group)

Keywords:simulation, epitaxial growth, nitride