[16a-P5-1~32] 15.4 III-V-group nitride crystals

[16a-P5-9] Dependence of crystallinity of N-face InN (000-1) films on MOVPE growth temperature

〇Tetsuya Akasaka¹, monika Schied¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:Indium nitride, MOVPE

N-face (000-1) can prevent the evaporation of nitrogen atoms from the growing surface since a nitrogen atom is bound with three underlying group-III atoms. N-face InN (000-1) films can therefore be grown at a growth temperature higher than In-face InN (0001) ones, which may result in the improvement of crystallinity and morphology of InN films. In this study, we grew N-face InN (000-1) films on GaN bulk substrates by MOVPE. We report on the growth temperature dependence of crystallinity of InN films systematically.