[16a-P6-1~9] 15.8 Crystal evaluation, impurities and crystal defects

△ [16a-P6-5] Combined impacts of thermal stress and doping on the incorporation of intrinsic point defects in growing single crystal Si

〇(M2)kouji kobayashi¹, shunta yamaoka¹, kouji sueoka¹ (1.Okayama Pref Univ.)

Keywords:Single crystal Si, Point defect, Thermal stress