[16p-A21-1~9] 15.4 III-V-group nitride crystals

[16p-A21-1] Influence of structural properties on emission mechanisms in InGaN nanocolumns

〇(PC)Takao Oto¹, Yutaro Mizuno¹, Ai Yanagihara¹, Rin Miyagawa¹, Jun Yoshida¹, Naoki Sakakibara¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

Keywords:nanocolumn, nanowire, InGaN

In our previous study, we systematically investigated the growth mechanisms as a function of the GaN column diameter D_GaN. Homogeneous InGaN NCs were axially grown on GaN NCs with D_GaN≤D_c, whereas InGaN/InGaN core-shell structures were spontaneously formed on GaN NCs with D_GaN>D_c, where D_c represents the critical column diameter. In this study, optical properties of InGaN NCs on GaN NCs were systematically investigated as a function of D_GaN, observing effectively suppressed surface recombination probability of InGaN NCs for D_GaN>D_c.