[16p-A21-1~9] 15.4 III-V-group nitride crystals

[16p-A21-7] Ultrafine (≤ 10nm) InGaN quantum structures fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇(M1)Shun Ishijima¹, Tomoya Mizutani¹, Kohei Ogawa¹, Yusuke Namae¹, Akihiro Matsuoka¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center.)

Keywords:nitride semiconductor, nano structure