The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-A22-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 16, 2016 12:45 PM - 2:15 PM A22 (Main Hall B)

Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

12:45 PM - 1:00 PM

[16p-A22-1] Study on solid-phase-crystallization temperature in amorphous undoped/V-doped ZnO stacked film on c-face sapphire

Akihiro Watanabe1, Tomoyuki Kawashima1, Katsuyoshi Washio1 (1.Tohoku Univ.)

Keywords:Zinc Oxide, RF magnetron sputter, Solid-phase crystallization

アモルファスZnO/V添加ZnO積層膜における固相成長温度がZnO結晶化と副相形成に及ぼす影響を検討した。