[16p-A24-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

[16p-A24-2] Quantitative measurement of the dopant concentration distribution in P-implanted emitter of single crystalline silicon solar cell using scanning nonlinear dielectric microscopy

〇Kotaro Hirose¹, Katsuto Tanahashi², Hidetaka Takato², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST)

Keywords:semiconductor, capacitance, SPM

The dopant distribution in emitter of solar cell is the key evaluation target because that relates light absorption, the distribution of electric field, and the contact resistivity of metal. We measured the cross section of phosphorus-implanted emitter of solar cell using scanning nonlinear dielectric microscopy and succeeded in the quantification of dopant concentration distribution. The dopant decreased exponentially from the surface texture to the bulk.