[16p-A24-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

▲ [16p-A24-3] Front Side Improvement for n-PERT Solar Cell by Removing the Boron-depleted Region

〇SIMAYI SHALAMUJIANG¹, Yasuhiro Kida¹, Katsuhiko Shirasawa¹, Tatsunobu Suzuki², Hidetaka Takato¹ (1.FREA, AIST, 2.Nippon Kasei Chemical Co., Ltd.)

Keywords:bifacial solar cell, , boron depleted region, spin etching

In this study, an important step was made toward improving the front-side emitter of n-type bifacial solar cells. An improved boron profile was obtained by etching the surface by 0.15 um. This resulted in a boron emitter without boron depletion at the surface. The measured Jsc from the I-V parameters implies that removing the depleted region by means of spin etching technique on the wafer surface exhibit a less damage to the pyramid textures on the wafer surface. The J_0e values were measured on a symmetrical p⁺/n/p⁺ samples for these non-etched and etched emitters. J_0e value improved from 121 fA/cm² to 103 fA/cm² by removing the depleted region. This improvement in J_0e resulted in a 3.5 mV increase in V_oc. The other main difference was observed in FF. The FF was 1.8% lower in the case of cells in which the boron-depleted region was not etched.