[16p-A24-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

[16p-A24-8] Evaluation of SiN_x-Si Interface using a Laser Terahertz Emission Microscope (LTEM)

〇Akira Ito¹, Toshimitsu Mochizuki³, Yasuhiro Takase¹, Hidetoshi Nakanishi¹, Katsuto Tanahashi³, Jonathon Mitchell³, Iwao Kawayama², Masayoshi Tonouchi², Katsuhiko Shirasawa³, Hidetaka Takato³ (1.SCREEN, 2.ILE Osaka Univ., 3.FREA, AiST)

Keywords:solar cell, terahertz wave, passivation layer

We measured THz peak amplitude using laser terahertz emission microscope (LTEM) and capacitance-voltage(C-V) characteristics to evaluate the passivation surfaces of n-Si wafers with SiN_x layers. We formed a SiN_x layer on the top surface of n-Si. ITO electrode on the top surface and Al electrode at the bottom are evaporated, then the sample connected to a DC voltage source to tune the surface band bending of the silicon while allowing for the LTEM measurements. The voltage shift from C-V curve to THz peak amplitude is observed, but the shapes of THz peak amplitude and C-V curve showed good correlation. LTEM has been shown to be a diagnostic and mapping tool for surface passivation quality of various layers used in solar cells.