The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[16p-A35-1~9] 3.13 Semiconductor optical devices

Fri. Sep 16, 2016 1:15 PM - 3:30 PM A35 (303-304)

Yasuhiko Ishikawa(Univ. of Tokyo)

3:15 PM - 3:30 PM

[16p-A35-9] Development of broadband QD ridge-waveguide laser diode in 1.0μm

Katsumi Yoshizawa1, Yoshinori Sawado1, Kouichi Akahane2, Naokatsu Yamamoto2 (1.PIONEER MTC, 2.NICT)

Keywords:Quantum Dot, Broadband Light Source

In optical information communication (optical ICT) network ,depletion of the optical frequency band associated with the expansion of the using of optical information communication has been a concern. In this respect, the wavelength 1.0μm range: Utilization of new optical frequency band of T-band (1.0 ~ 1.26μm) and O band (1.26 ~ 1.36μm) is expected. We continue to research and development on new optical gain material and optical ICT devices in this band. We have reported the development of broadband ridge waveguide type LD in 1.1μm band and the development of the broadband light source in the 1.0μm band. This time, we will report development of good ridge waveguide type LD indicating the broadband performance in 1.0μm band using InAs quantum dots.