Interface control process for Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MOSHEMTs

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)

Kozo Makiyama(Fujitsu Lab.)

1:45 PM - 2:00 PM

〇Shota Kaneki¹, Nishiguchi Kenya¹, Hashizume Tamotsu¹ (1.RCIQE, Hokkaido Univ.)

Keywords:GaN