The 77th JSAP Autumn Meeting, 2016

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Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16p-B1-1~13] 13.8 Compound and power electron devices and process technology

Fri. Sep 16, 2016 1:30 PM - 5:00 PM B1 (Exhibition Hall)

Kozo Makiyama(Fujitsu Lab.)

1:45 PM - 2:00 PM

△ [16p-B1-2] Interface control process for Al2O3/AlGaN/GaN MOSHEMTs

〇Shota Kaneki1, Nishiguchi Kenya1, Hashizume Tamotsu1 (1.RCIQE, Hokkaido Univ.)

Keywords:GaN