[16p-B3-1~9] 6.5 Surface Physics, Vacuum

[16p-B3-6] Reaction of atomic defects on the surface of metal oxide

〇Taketoshi Minato^1,2,3, Chi-Lun Pang⁴, Naoki Asao⁵, Yoshinori Yamamoto⁵, Takashi Nakayama⁶, Maki Kawai⁷, Yousoo Kim² (1.IIAIR, Tohoku Univ., 2.SISL, RIKEN, 3.SACI, Kyoto Univ., 4.UCL, 5.WPI-AIMR, Tohoku Univ., 6.Depart. Phys., Chiba Univ., 7.Depart. Adv. Mater. Sci., The Univ. Tokyo)

Keywords:defect, metal oxide, scanning probe microscopy

Introduction of atomic defects (e.g., adsorbates, vacancies, and interstitials) to metal oxides gives rise to new physical and chemical properties, and manipulation of the defects is expected to bring new functions to metal oxide materials. While manipulation of atomic defects has been achieved using scanning probe microscopy (SPM), the reaction mechanism of the manipulation has not been explained. In this presentation, we report the study of the reaction mechanism for single hydrogen ion desorption from titanium dioxide. In particular, a new reaction mechanism, in which tunneling is induced by the combination of the reduction of reaction barrier width by an electric field and electron excitations, is clarified.