[16p-B3-1~9] 6.5 Surface Physics, Vacuum

[16p-B3-8] Analysis of surface structure and electronic states for oxidation processes on Si(113)

〇Arata Ogawa¹, Hiroya Tanaka¹, Shinya Ohno¹, Masatoshi Tanaka¹, Kazushi Miki², Shuichi Ogawa³, Yuji Takakuwa³ (1.Yokohama Nat'l Univ., 2.NIMS, 3.IMRAM, Tohoku Univ)

Keywords:silicon oxidation, STM, UPS

We performed measurements by using UPS and STM, Si (113) surface oxidation was investigated temperature change dependence of in its initial stage. As a result, like Si (001) plane, Si (113) plane could be confirmed that the change in the three oxidation manner the initial oxidation process occurs in, and we obtain a phase diagram of the oxides manner changes dependent on the oxidation pressure and temperature. In addition, in also one of oxidation style, the difference is confirmed that in the oxidation proceeds with the change in the oxidation temperature, to discuss the causes of this phenomenon.