2016年 第77回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

4 JSAP-OSA Joint Symposia 2016 » 4.4 Opto-electronics

[16p-C301-1~12] 4.4 Opto-electronics

2016年9月16日(金) 13:30 〜 17:00 C301 (日航30階鶴)

丸山 武男(金沢大)、Set Sze(東大)

14:30 〜 14:45

[16p-C301-4] Integration of GaInAsP Laser Diode on Direct-Bonded Thin Film InP-Si Substrate

〇(D)Gandhi Kallarasan1、Tetsuo Nishiyama1、Naoki Kamada1、Yuya Onuki1、Kazuhiko Shimomura1 (1.Sophia Univ.)

キーワード:GaInAsP Laser Diode, Direct bonding, Silicon Substrate

To realize a maximum and a qualitative output in the fabrication and integration of optical devices, Metal Organic Vapor Phase Epitaxy(MOVPE) growth on the wafer bonded substrates are of great interest for the researchers especially in the silicon photonics. In particular, we conceptualized and demonstrated MOVPE growth on wafer bonded InP/Si substrate and obtained lasing around 1.2μm.