[16p-C301-1~12] 4.4 Opto-electronics

▲ [16p-C301-4] Integration of GaInAsP Laser Diode on Direct-Bonded Thin Film InP-Si Substrate

〇(D)Gandhi Kallarasan¹、Tetsuo Nishiyama¹、Naoki Kamada¹、Yuya Onuki¹、Kazuhiko Shimomura¹ (1.Sophia Univ.)

キーワード：GaInAsP Laser Diode, Direct bonding, Silicon Substrate

To realize a maximum and a qualitative output in the fabrication and integration of optical devices, Metal Organic Vapor Phase Epitaxy(MOVPE) growth on the wafer bonded substrates are of great interest for the researchers especially in the silicon photonics. In particular, we conceptualized and demonstrated MOVPE growth on wafer bonded InP/Si substrate and obtained lasing around 1.2μm.