[16p-D61-1~12] 15.5 Group IV crystals and alloys

[16p-D61-12] Real-time spectro-ellipsometric discrimination of 2D and 3D growth of Ge on SiO₂

〇Housei Akazawa¹ (1.NTT DIC)

Keywords:Ge, SiO2, spectroscopic ellipsometry

The formation of Ge dots on SiO₂ has been attracterd attention aimed at application to high-density memories as well as light emitters. For controlling dot size, density, and shape, critical points where growth mode changes between 2D and 3D need to be known during growth. We applied real-time spectro-ellipsometric monitoring to judge whether the system goes into 2D or 3D growth at the early stage of growth.