Fuyumi Hemmi

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

11:15 AM - 11:30 AM

△ [22a-W541-9] Suppression of isolation leakage current in AlGaN/GaN HEMTs by neutral-beam etching

〇Fuyumi Hemmi¹, Cedric Thomas², Yi-Chun Lai³, Akio Higo³, Alex Guo⁴, Shireen Warnock⁴, Jesus A. del Alamo⁴, Seiji Samukawa^2,3, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC Tohoku Univ., 2.IFS Tohoku Univ., 3.AIMR Tohoku Univ., 4.MTL MIT)

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